1 3. Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.) 2 4. Wafer Cleaning and Gettering (cont.) 3 5. Wafer Cleaning and Gettering - Contamination Measurement Techniques 4 6. Oxidation and the Si/SiO2 Interface. Deal/Grove Model, Thin Oxide Models 5 7. Oxidation and the Si/SiO2 Interface. 2D Effects, Doping Effects, Point Defect 6 8. Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic 7 9. Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects 8 10. Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion 9 11. Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques 10 12. Ion Implantation and Annealing - Analytic Models and Monte Carlo 11 13. Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED 12 14. Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction 13 15. Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail 14 16. The SUPREM IV Process Simulator 15 17. Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth 16 18. Thin Film Deposition and Epitaxy - CVD Examples and PVD 17 19. Thin Film Deposition and Epitaxy - Modeling Topography of Deposition 18 20. Etching - Introduction 19 21. Etching - Poly Gate Etching, Stringers, Modeling of Etching 20 22. Silicides, Device Contacts, Novel Gate Materials 21 23. Growth and Processing of Strained Si/SiGe and Stress Effects on Devices